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PSMNR89-25YLE中文资料N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56数据手册Nexperia规格书

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厂商型号

PSMNR89-25YLE

功能描述

N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

制造商

Nexperia Nexperia B.V. All rights reserved

中文名称

安世 安世半导体(中国)有限公司

数据手册

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更新时间

2025-9-28 16:37:00

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PSMNR89-25YLE规格书详情

描述 Description

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.

特性 Features

• Fully optimized Safe Operating Area (SOA) for superior linear mode operation
• Optimized for low RDSon / low I2R conduction losses
• LFPAK56 package for applications that demand the highest performance and reliability in a 30 mm2 footprint
• Low leakage <1 µA at 25 °C
• Copper-clip for low parasitic inductance and resistance
• High reliability LFPAK package, qualified to 175 °C

应用 Application

• Hot swap in 12 V - 20 V applications
• e-Fuse
• DC switch
• Load switch
• Battery protection

技术参数

  • 制造商编号

    :PSMNR89-25YLE

  • 生产厂家

    :Nexperia

  • Package name

    :LFPAK56; Power-SO8

  • Product status

    :Production

  • Channel type

    :N

  • Nr of transistors

    :1

  • VDS [max] (V)

    :25

  • RDSon [max] @ VGS = 10 V (mΩ)

    :0.98

  • Tj [max] (°C)

    :175

  • ID [max] (A)

    :270

  • QGD [typ] (nC)

    :10

  • QG(tot) [typ] @ VGS = 4.5 V (nC)

    :33

  • QG(tot) [typ] @ VGS = 10 V (nC)

    :73

  • Ptot [max] (W)

    :224

  • Qr [typ] (nC)

    :25

  • VGSth [typ] (V)

    :1.96

  • Automotive qualified

    :N

  • Ciss [typ] (pF)

    :4968

  • Coss [typ] (pF)

    :2101

  • Release date

    :2022-09-19

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