NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

Key applications } Synchronous buck regulators } DC-DC conversion } Voltage regulator modules (VRM) } Power OR-ing

文件：1.78504 Mbytes 页数：8 Pages

恩XP

丝印：4C130L；Package：SOT669；N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology

1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High reliability Power SO8 package, qualified to 175°C • Low

文件：750.59 Kbytes 页数：14 Pages

NEXPERIA

安世

NextPower MOSFETs

文件：1.8032 Mbytes 页数：8 Pages

PHI

飞利浦

NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

文件：1.8032 Mbytes 页数：8 Pages

PHI

飞利浦

N-channel 30 V 4.35m廓 logic level MOSFET in LFPAK using NextPower technology

文件：323.18 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • High reliability Power SO8 package, qualified to 175°C\n• Low parasitic inductance and resistance\n• Optimised for 4.5V Gate drive utilising NextPower Superjunction technology\n• Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads;

Nexperia

安世