丝印：PSMN3R9-60PS；Package：SOT78；N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT

1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • Robust construction for

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丝印：3F9S10J；Package：SOT1023；NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package

1. General description NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 120 A ID (max) – demonstrated continuous current rating • Low Q

文件：310.75 Kbytes 页数：13 Pages

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N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Low parasitic inductance and resistance  Optimised for

文件：1.12128 Mbytes 页数：14 Pages

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N-channel 25 V 4.15 m logic level MOSFET in LFPAK33 using NextPower Technology

文件：370.9 Kbytes 页数：14 Pages

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N-channel 25 V 4.15 m廓 logic level MOSFET in LFPAK33 using NextPower Technology

文件：370.9 Kbytes 页数：14 Pages

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N-channel 60 V, 3.9 m廓 standard level MOSFET in SOT78

文件：257.47 Kbytes 页数：13 Pages

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isc N-Channel MOSFET Transistor

文件：305.75 Kbytes 页数：2 Pages

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N-channel 60 V, 3.9 m廓 standard level MOSFET in SOT78

文件：257.47 Kbytes 页数：13 Pages

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N-channel 60 V, 4.0 m廓 standard level MOSFET in TO220F(SOT186A)

文件：355.74 Kbytes 页数：14 Pages

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N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • Low parasitic inductance and resistance\n• Optimised for 4.5V Gate drive utilising NextPower Superjunction technology\n• Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads;

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