丝印：3D030L；Package：LFPAK56；N-channel 30 V, 3.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：728.28 Kbytes 页数：13 Pages

NEXPERIA

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N-channel 30 V, 3.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：294.09 Kbytes 页数：13 Pages

PHI

PHI

N-channel 60 V 3.2 m廓 standard level MOSFET in D2PAK

文件：213.54 Kbytes 页数：15 Pages

恩XP

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：299.43 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

文件：299.96 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60 V 3.0 m廓 standard level MOSFET in I2PAK.

文件：246.22 Kbytes 页数：13 Pages

恩XP

N-channel 60 V 3.0 m廓 standard level MOSFET

文件：220.13 Kbytes 页数：13 Pages

恩XP

isc N-Channel MOSFET Transistor

文件：305.94 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 30 V 3 mΩ logic level MOSFET in LFPAK

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. • High efficiency due to low switching and conduction losses\n• Suitable for logic level gate drive sources;

Nexperia

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N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without pr • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies\n• Superfast switching with soft-recovery; s-factor > 1\n• Low spiking and ringing for low EMI designs\n• Unique “SchottkyPlus” technology; Schottky-like performance with < 1µA leakage at 25°C\n• Opti;

Nexperia

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