丝印：2E1L30Y；Package：SOT669；N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

1. General description N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) for

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. • Fully optimized Safe Operating Area (SOA) for superior linear mode operation\n• Optimized for low RDSon / low I2R conduction losses\n• LFPAK56 package for applications that demand the highest performance and reliability in a 30 mm2 footprint\n• Low leakage <1 µA at 25 °C\n• Copper-clip for low par;

Nexperia

安世

Nexperia
TO-263

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

上传：深圳市铭尔达科技有限公司

PROTEK
SOT143

Protek

上传：深圳市鼎欣微电子有限公司

ROHM
3921

ROHM

罗姆

上传：深圳市金嘉锐电子有限公司