PSMN1R8-30MLH中文资料N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology数据手册Nexperia规格书

描述 Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 A and optimizedwith low gate resistance (RG) for fast-switching applications.

特性 Features

• Optimized for low RDSon and low gate resistance (RG)
• Fast switching – reduced switching losses
• Strong linear-mode (SOA) rating
• Low leakage < 1μA at 25 °C
• Low spiking and ringing for low EMI designs
• Optimized for 4.5 V gate drive
• 150 A continuous ID(max) rating
• High reliability copper-clip bonded and solder die attach LFPAK33 package
• Qualified to 175 °C
• Exposed leads for optimal visual solder inspection

应用 Application

• Synchronous buck regulator
• Synchronous rectifier in AC-DC and DC-DC applications
• BLDC (brushless) motor control
• eFuse and battery protection