PSMN1R5-50YLH数据手册Nexperia中文资料规格书

描述 Description

200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. NextPowerS3 family using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current.

特性 Features

• 200 A continuous current capability
• Optimised for 36 V (nominal) battery powered applications
• LFPAK56E low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection
• Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating
• Qualified to 175 °C
• Avalanche rated, 100% tested
• Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
• Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
• Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
• Narrow VGS(th) rating for easy paralleling and improved current sharing
• Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

应用 Application

• Brushless DC motor control
• Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies
• Battery protection and Battery Management Systems (BMS)
• Load switch
• 10 cell lithium-ion battery applications (36 V ‒ 42 V)