PSMN1R7-40YLB中文资料N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using Optimised NextPower-S3 Schottky-Plus technology数据手册Nexperia规格书

描述 Description

200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimisation to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.

特性 Features

• Optimised for improved EMC Performance
• 200 A continuous ID(max) rating
• Avalanche rated, 100% tested at IAS = 180 A
• Strong SOA (linear-mode) rating
• NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
• Low Qrr, QG and QGD for high system efficiency and low EMI designs
• Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage
• Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
• High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability
• Low parasitic inductance and resistance

应用 Application

• Automation, control and instrumentation
• Autonomous systems, Robotics and Cobots
• DC-to-DC converters
• Brushless DC motor control
• Brushed motors
• Battery isolation
• Industrial load-switch and eFuse
• Inrush management, hotswap