N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

1. General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 200 A

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N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance po

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N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

General description 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance po

文件：315.97 Kbytes 页数：13 Pages

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Discrete and MOSFET components, analog & logic ICs

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