PSMN1R7-40YLB中文资料安世数据手册PDF规格书

General description

200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.

Features and benefits

• Optimized for improved EMC Performance

• 200 A continuous ID(max) rating

• Avalanche rated, 100% tested at IAS = 180 A

• Strong SOA (linear-mode) rating

• NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery'

• Low Qrr, QG and QGD for high system efficiency and low EMI designs

• Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage

• Optimized for 4.5 V gate drive utilizing NextPowerS3 Superjunction technology

• High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C

• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability

• Low parasitic inductance and resistance

Applications

• Automation, control and instrumentation

• Autonomous systems, Robotics and Cobots

• DC-to-DC converters

• Brushless DC motor control

• Brushed motors

• Battery isolation

• Industrial load-switch and eFuse

• Inrush management, hotswap