N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology

1. General description 240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 240

文件：275.86 Kbytes 页数：15 Pages

NEXPERIA

安世

N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology

1. General description 240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 240

文件：275.86 Kbytes 页数：15 Pages

NEXPERIA

安世

N-channel 40 V, 1.4 m廓, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology

文件：302.46 Kbytes 页数：13 Pages

NEXPERIA

安世

Nexperia(安世)
SOT669

Nexperia(安世)

上传：深圳市金芯世纪电子有限公司

NEXPERIA/安世
SOT-669

NEXPERIA/安世

上传：美源芯科（深圳）电子科技有限公司