PSMN1R4-40YLDX中文资料安世数据手册PDF规格书

1. General description

240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56

package using advanced TrenchMOS Superjunction technology. This product has been designed

and qualified for high performance power switching applications.

2. Features and benefits

• 240 A capability

• Avalanche rated, 100% tested at IAS = 190 A

• NextPower-S3 technology delivers 'superfast switching with soft recovery'

• Low QRR, QG and QGD for high system efficiency and low EMI designs

• Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage

• Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology

• High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and

qualified to 175 °C

• Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

• Low parasitic inductance and resistance

3. Applications

• Synchronous rectification

• DC-to-DC converters

• High performance & high efficiency server power supply

• Motor control

• Power OR-ing