N-channel TrenchMOS standard level FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Low body Qr ■ Fast switching Applications ■ Industrial DC motor control ■ Class D audio ■ DC-to-DC converters ■ Switched-mode powe

文件：83.44 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：928.2 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Higher operating power due to low thermal resistance\n• Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世

pulse transformers

文件：100.87 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TIOS102 and TIOS102x Digital Sensor Output Drivers with Integrated Surge Protection In Small Packages

文件：1.65478 Mbytes 页数：33 Pages

TI

德州仪器

TIOS102 and TIOS102x Digital Sensor Output Drivers with Integrated Surge Protection In Small Packages

1 Features • Wide supply operation – 4.75-V to 36-V supply Voltage (TIOS102, TIOS1023) – 7-V to 36-V supply voltage (TIOS1025) • PNP, NPN or push-pull configurable output • Functional safety capable – Documentation available to aid in functional safety system design • Pin-compatible with

文件：1.97291 Mbytes 页数：34 Pages

TI

德州仪器