丝印：0D725L；Package：LFPAK56；N-channel 25 V, 0.72 m廓, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：279.24 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel 25 V, 0.7 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology

文件：237.77 Kbytes 页数：10 Pages

PHI

飞利浦

N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique \"SchottkyPlus\" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without • 100% Avalanche tested at I(AS)=190A\n• Superfast switching with soft-recovery\n• Unique \"SchottkyPlus\" technology; Schottky-like performance with < 1μA leakage at 25°C\n• Low parasitic inductance and resistance\n• Wave solderable; exposed leads for optimal visual solder inspection;

Nexperia

安世

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：DIODE ARRAY SCHOTTKY

NEXPERIA

安世