丝印：45RL10H；Package：LFPAK56D；N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low bo

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NEXPERIA

安世

N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. • High peak drain current IDM\n• Copper clip and flexible Leads\n• High operating junction temperature Tj = 175 °C\n• Superior reliability\n• Low body diode reverse recovery charge Qr;

Nexperia

安世

NEXPERIA USA INC

上传：天津市博通航睿技术有限公司

SOT669

Nexperia(安世)

上传：深圳市金芯世纪电子有限公司

SOT-669

NEXPERIA/安世

上传：美源芯科（深圳）电子科技有限公司