丝印：45RL10H；Package：LFPAK56D；N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low bo

文件：297.96 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司