isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 47A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：298.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS SiliconMAX standard level FET

1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

文件：799.46 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：25RS10H；Package：LFPAK56D；N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • High peak drain current IDM • Copper clip and flexible Leads • High operating junction temperature Tj = 175 °C • Superior reliability • Low

文件：277.22 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel TrenchMOS횚 transistor

文件：98.26 Kbytes 页数：9 Pages

PHI

飞利浦

N-channel TrenchMOS SiliconMAX standard level FET

文件：177.95 Kbytes 页数：11 Pages

恩XP

丝印：025L80；Package：LFPAK56；N-channel 80 V, 25 m廓 logic level MOSFET in LFPAK56

文件：768.66 Kbytes 页数：13 Pages

NEXPERIA

安世

PSMN025-100D - N-channel TrenchMOS SiliconMAX standard level FET

N-channel TrenchMOS SiliconMAX standard level FET - SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on ·Higher operating power due to low thermal resistance\n·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世

N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. • High peak drain current IDM\n• Copper clip and flexible Leads\n• High operating junction temperature Tj = 175 °C\n• Superior reliability\n• Low body diode reverse recovery charge Qr;

Nexperia

安世

N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. • Advanced TrenchMOS provides low RDSon and low gate charge\n• Logic level gate operation\n• Avalanche rated, 100% tested\n• LFPAK provides maximum power density in a Power SO8 package;

Nexperia

安世