isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 47A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

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1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

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安世安世半导体(中国)有限公司

N-channel TrenchMOS횚 transistor

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飞利浦

N-channel TrenchMOS SiliconMAX standard level FET

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恩XP

PSMN025-100D - N-channel TrenchMOS SiliconMAX standard level FET

N-channel TrenchMOS SiliconMAX standard level FET - SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications on ·Higher operating power due to low thermal resistance\n·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics;

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