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PSMN005

N-channel logic level TrenchMOS(TM) transistor

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PSMN005-25D

N-channel logic level TrenchMOS transistor

GENERALDESCRIPTION SiliconMAXproductsusethelatestPhilipsTrenchtechnologytoachievethelowestpossibleon-stateresistanceineachpackageateachvoltagerating. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Logiclevelcompatible Applications:-

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PSMN005-25D

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PSMN005-30K

TrenchMOS logic level FET

Description SiliconMAX™productsusethelatestPhilipsTrenchMOS™technologytoachievethelowestpossibleon-stateresistanceinaSOT96-1(SO8)package. Features ■Verylowon-stateresistance ■Fastswitching ■TrenchMOS™technology. Applications ■DCtoDCconvertors ■Computermothe

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PSMN005-30K

N-channel TrenchMOS SiliconMAX logic level FET

1.1Generaldescription SiliconMAXlogiclevelN-channelenhancementmodeField-EffectTransistor(FET)ina plasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedfor useincomputing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbene

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PSMN005-55B

N-channel logic level TrenchMOS transistor

GENERALDESCRIPTION SiliconMAXproductsusethelatestPhilipsTrenchtechnologytoachievethelowestpossibleon-stateresistanceineachpackageateachvoltagerating. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance Applications:-

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PSMN005-55B

N-channel logic level TrenchMOS(TM) transistor

FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance GENERALDESCRIPTION SiliconMAXproductsusethelatestPhilipsTrenchtechnologytoachievethelowestpossibleon-stateresistancein eachpackageateachvoltagerating. Applications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PSMN005-55B

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PSMN005-55P

N-channel logic level TrenchMOS transistor

GENERALDESCRIPTION SiliconMAXproductsusethelatestPhilipsTrenchtechnologytoachievethelowestpossibleon-stateresistanceineachpackageateachvoltagerating. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance Applications:-

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PSMN005-55P

N-channel logic level TrenchMOS(TM) transistor

FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Lowthermalresistance GENERALDESCRIPTION SiliconMAXproductsusethelatestPhilipsTrenchtechnologytoachievethelowestpossibleon-stateresistancein eachpackageateachvoltagerating. Applications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    PSMN005

  • 功能描述:

    MOSFET TRENCH<=30

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
恩XP
22+
TO-3P
6000
十年配单,只做原装
询价
恩XP
23+
TO-3P
6000
原装正品,支持实单
询价
恩XP
22+
TO-3P
25000
只做原装进口现货,专注配单
询价
恩XP
25+
TO-3P
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
PH
24+
SOT78TO-220AB
8866
询价
PHI
2020+
SOP8
1992
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
恩XP
17+
TO-220
6200
100%原装正品现货
询价
恩XP
24+
TO-220AB
3000
全新原装环保现货
询价
恩XP
16+
TO220
9
全新原装现货
询价
PHI
23+
TO-220
35524
全新原装现货
询价
更多PSMN005供应商 更新时间2025-7-22 14:02:00