isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.2mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：357.73 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.56 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK) Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency

文件：291.61 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK) Features ■ Low on-state resistance ■ Fast switching. Applications ■ High frequency

文件：291.61 Kbytes 页数：13 Pages

PHI

飞利浦

N-channel TrenchMOS intermediate level FET

General description SiliconMAX intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefit

文件：236.12 Kbytes 页数：14 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.14 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS intermediate level FET

1.1 General description SiliconMAX intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features

文件：349.71 Kbytes 页数：15 Pages

NEXPERIA

安世

PSMN003-25W

文件：129.479 Kbytes 页数：8 Pages

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飞利浦

N-channel TrenchMOS intermediate level FET

SiliconMAX intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

MOSFET N-CH 30V 75A D2PAK

恩XP