6 to 12 A Switching Regulators

文件：213.87 Kbytes 页数：3 Pages

POWER-ONE

Positive Switching Regulators

文件：2.13196 Mbytes 页数：19 Pages

bel

250 - 800 WATTS DC/DC SINGLE OUTPUT

文件：315.35 Kbytes 页数：2 Pages

POWERBOX

250 - 800 WATTS DC/DC SINGLE OUTPUT

文件：315.35 Kbytes 页数：2 Pages

POWERBOX

250 - 800 WATTS DC/DC SINGLE OUTPUT

文件：315.35 Kbytes 页数：2 Pages

POWERBOX

250 - 800 WATTS DC/DC SINGLE OUTPUT

文件：315.35 Kbytes 页数：2 Pages

POWERBOX

丝印：PSC2H065Y；Package：DPAK；Automotive 650 V, 2 A high surge silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • PPAP capable • ECOPACK2 compliant component • VRRM guaranteed from -40 to 175 °C • Power efficient product

文件：241.42 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC2H12Y；Package：DPAKHV；Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component Applications • Bootstrap function of SiC MOS-FETS • Snubbe

文件：259.75 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：PSC2H12Y；Package：DPAKHV；Automotive 1200 V, 2 A power Schottky silicon carbide diode

Features • AEC-Q101 qualified • PPAP capable • No or negligible reverse recovery • High forward surge capability • Operating Tj from -40 °C to 175 °C • Creepage distance of 3 mm as per IEC 60664-1 • ECOPACK2 compliant component

文件：299.25 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

650 V, 20 A SiC Schottky diode in D2PAK R2P

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature in

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