UMW817

CurrentConversionRatio(Min50WorkingConditionIF=5mA,VCE=5V)

●特点(Features): 1.电流转换比(CTR:最小.50工作条件IF=5mA,VCE=5V) CurrentConversionRatio(Min50WorkingConditionIF=5mA,VCE=5V) 2.绝缘电压：(VISO=5,000Vrms)InsulationVoltage=5,000Vrms 3.响应时间(tr:TYP.4μs工作条件VCE=2V,IC=2mA,RL=100Ω) ResponseTime(tr:TYP.4μsworkingconditionVCE=2V,IC=2mA,

UMW817

CurrentConversionRatio(Min50WorkingConditionIF=5mA,VCE=5V)

特点(Features): 电流转换比(CTR:最小.50工作条件IF=5mA,VCE=5V) CurrentConversionRatio(Min50WorkingConditionIF=5mA,VCE=5V) 绝缘电压：(VISO=5,000Vrms)InsulationVoltage=5,000Vrms 响应时间(tr:TYP.4μs工作条件VCE=2V,IC=2mA,RL=100Ω) ResponseTime(tr:TYP.4μsworkingconditionVCE=2V,IC=2mA,RL=100Ω)

UMW817C

CurrentConversionRatio(Min50WorkingConditionIF=5mA,VCE=5V)

●特点(Features): 1.电流转换比(CTR:最小.50工作条件IF=5mA,VCE=5V) CurrentConversionRatio(Min50WorkingConditionIF=5mA,VCE=5V) 2.绝缘电压：(VISO=5,000Vrms)InsulationVoltage=5,000Vrms 3.响应时间(tr:TYP.4μs工作条件VCE=2V,IC=2mA,RL=100Ω) ResponseTime(tr:TYP.4μsworkingconditionVCE=2V,IC=2mA,

UMW817C-S

CurrentConversionRatio(Min50WorkingConditionIF=5mA,VCE=5V)

特点(Features): 电流转换比(CTR:最小.50工作条件IF=5mA,VCE=5V) CurrentConversionRatio(Min50WorkingConditionIF=5mA,VCE=5V) 绝缘电压：(VISO=5,000Vrms)InsulationVoltage=5,000Vrms 响应时间(tr:TYP.4μs工作条件VCE=2V,IC=2mA,RL=100Ω) ResponseTime(tr:TYP.4μsworkingconditionVCE=2V,IC=2mA,RL=100Ω)

X817A

PNPMediumpowertransistor

Description TheSTX817AisaPNPtransistormanufacturedusingPlanarTechnologyresultinginruggedhighperformancedevices. Generalfeatures ■TO-92packagesuitableforthrough-holePCBassembly ■Incompliancewiththe2002/93/ECEuropeanDirective Applications ■Voltageregulation ■R

XOPA817DTKR

OPA817800-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier

1Features •Widebandwidth: –Gain-bandwidthproduct:390MHz –Bandwidth(G=1V/V):800MHz –Large-signalbandwidth(2VPP):245MHz –Slewrate:970V/μs •Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:4μV/°C(maximum) •Inputvoltagenoise:

XOPA817DTKR

OPA817800-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier

1Features •Widebandwidth: –Gain-bandwidthproduct:400MHz –Bandwidth(G=1V/V):800MHz –Large-signalbandwidth(2VPP):250MHz –Slewrate:1000V/μs •Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:3.5μV/°C(maximum) •Inputvoltagenoi

ZUMT817

SOT323NPNSILICONPLANARMEDIUMPOWERTRANSISTORS