Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V)

特点(Features): 电流转换比(CTR: 最小. 50工作条件IF=5mA, VCE=5V) Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V) 绝缘电压：(VISO=5,000Vrms) Insulation Voltage = 5,000Vrms 响应时间 (tr: TYP. 4μs 工作条件 VCE=2V, IC=2mA, RL=100 Ω) Response Time (tr: TYP. 4μs working condition VCE=2V, IC=2mA, RL=100 Ω)

文件：2.10258 Mbytes 页数：4 Pages

UMW

友台半导体

光耦合器

UMW

友台半导体

PNP Medium power transistor

Description The STX817A is a PNP transistor manufactured using Planar Technology resulting in rugged high performance devices. General features ■ TO-92 package suitable for through-hole PCB assembly ■ In compliance with the 2002/93/EC European Directive Applications ■ Voltage regulation ■ R

文件：138.47 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

OPA817 800-MHz, High-Precision, Unity-Gain Stable, FET-Input Operational Amplifier

1 Features • Wide bandwidth: – Gain-bandwidth product: 390 MHz – Bandwidth (G = 1 V/V): 800 MHz – Large-signal bandwidth (2 VPP): 245 MHz – Slew rate: 970 V/μs • High precision: – Input offset voltage: 250 μV (maximum) – Input offset voltage drift: 4 μV/°C (maximum) • Input voltage noise:

文件：1.74957 Mbytes 页数：25 Pages

TI

德州仪器

OPA817 800-MHz, High-Precision, Unity-Gain Stable, FET-Input Operational Amplifier

1 Features • Wide bandwidth: – Gain-bandwidth product: 400 MHz – Bandwidth (G = 1 V/V): 800 MHz – Large-signal bandwidth (2 VPP): 250 MHz – Slew rate: 1000 V/μs • High precision: – Input offset voltage: 250 μV (maximum) – Input offset voltage drift: 3.5 μV/°C (maximum) • Input voltage noi

文件：2.35393 Mbytes 页数：30 Pages

TI

德州仪器