丝印：PS1100；Package：TSSOP；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：PS1100；Package：TSSOP；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：PS1101；Package：TSSOP；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c

文件：279.47 Kbytes 页数：15 Pages

TI

德州仪器

丝印：PS1101；Package：TSSOP；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c

文件：279.47 Kbytes 页数：15 Pages

TI

德州仪器

丝印：PS1101；Package：TSSOP；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.09 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1101 is a single, low-rDS(on), P-c

文件：279.47 Kbytes 页数：15 Pages

TI

德州仪器

FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES\n• Converter bridge for 3 phase AC-to-DC power conversion.\n• Circuit for dynamic braking of motor regenerative energy.\n• 3-phase IGBT inverter bridge configured by the latest 3rd.\n   generation IGBT and diode technology.\n• Inverter output current capability IO ( • Converter bridge for 3 phase AC-to-DC power conversion.\n• Circuit for dynamic braking of motor regenerative energy.\n• 3-phase IGBT inverter bridge configured by the latest 3rd.\n   generation IGBT and diode technology.\n• Inverter output current capability IO (Note 1):\n  (Note 1) : The inverter;

MITSUBISHI

三菱电机

PS1100 Schottky Barrier Rectifiers

Surge