丝印：11；Package：SOT1216；NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

1. General description NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Low pack

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NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k

文件：207.29 Kbytes 页数：13 Pages

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NPN/PNP resistor-equipped transistors; R1=47kΩ,R2=47kΩ

NPN/PNP double Resistor-Equipped Transist ors (RET) in small Surface-Mounted Device (SMD) plastic packages. • 100 mA output current capability\n• Built-in bias resistors\n• Simplifies circuit design\n• Low package height of 0.37 mm\n• Reduces component count\n• Reduces pick and place costs\n• AEC-Q101 qualified;

Nexperia

安世

NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k

恩XP