200 V, 8 A hyperfast recovery rectifier

Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 8 A • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond technology • Plan

文件：263.96 Kbytes 页数：12 Pages

NEXPERIA

安世

Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：PNE20080EPE/SOT1289B/CFP15

Nexperia USA Inc.

25 Watts, 1.6-1.7 GHz RF Power Transistor

Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization

文件：445.22 Kbytes 页数：3 Pages

Ericsson

爱立信

Schottky PowerMod

文件：123.26 Kbytes 页数：2 Pages

Microsemi

美高森美

Schottky PowerMod

Schottky Barrier Rectifier 200 Amperes/ 80 to 100 Volts Guard Ring Protection 175 C Junction Temperature Reverse Energy Tested ROHS Compliant

文件：148.78 Kbytes 页数：2 Pages

Microsemi

美高森美

200 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

文件：126.83 Kbytes 页数：3 Pages

MCC