PIN Photodiode For optical control systems

PIN Photodiode For optical control systems Features ● Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) ● High photodetection sensitivity and wide dynamic sensitivity ● Peak sensitivity wave length is 900 nm and wide spectral sensitivity ● Wid

文件：65.95 Kbytes 页数：3 Pages

Panasonic

松下

Silicon planar type For optical control systems

Silicon planar type For optical control systems ■ Features • Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.) • High sensitivity, high reliability • Peak emission wavelength matched with infrared light emitting diodes: λp = 940 nm (typ.) • Wi

文件：81.32 Kbytes 页数：3 Pages

Panasonic

松下

Silicon planar type

PIN Photodiode For optical control systems Features ● Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) ● High sensitivity, high reliability ● Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 900 nm (typ.) ● Wide

文件：82.85 Kbytes 页数：3 Pages

Panasonic

松下

PIN Photodiode

For optical fiber Features • Flat side-view type package • High coupling capability suitable for plastic fiber • High quantum efficiency • High-speed response

文件：56.04 Kbytes 页数：3 Pages

Panasonic

松下

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • Telephony and professional communication equipment.

文件：49.46 Kbytes 页数：8 Pages

PHI

飞利浦

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • Telephony and professional communication equipment.

文件：49.46 Kbytes 页数：8 Pages

PHI

飞利浦

NPN RF Amplifier

NPN Small Signal High Frequency Amplifiers & Oscillators

文件：77.23 Kbytes 页数：2 Pages

Fairchild

仙童半导体

Small Signal Transistors

Small Signal Transistors TO-92 Case (Continued)

文件：20.68 Kbytes 页数：1 Pages

Central

NPN - RF Transistor Chip

Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bondin

文件：450.73 Kbytes 页数：2 Pages

Central

NPN - RF Transistor Chip

Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bondin

文件：450.73 Kbytes 页数：2 Pages

Central