Atomic EFI Throttle Body

Thank you for purchasing the MSD Atomic EFI Throttle Body. The throttle body features integrated fuel rails, injectors, ECU, and sensors to minimize the diffculties associated with converting carbureted fuel systems over to Electronic Fuel Injection. Since the Atomic Throttle Body uses a standard

文件：1.05132 Mbytes 页数：4 Pages

MALLORY

PNP SILICON TRANSISTORS

文件：169.69 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

PNP SILICON TRANSITOR

DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in AF small amplifiers and direct coupled circuits. Their maximum power dissipation = 160mW at Ta = 25 °C.

文件：165.45 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2906, PN2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

文件：324.65 Kbytes 页数：2 Pages

Central

PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES

PNP SILICON GENERAL PURPOSE AMPLIFIER AND SWITCHES

文件：103.19 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2906, PN2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

文件：324.65 Kbytes 页数：2 Pages

Central

PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES

PNP SILICON GENERAL PURPOSE AMPLIFIER AND SWITCHES

文件：103.19 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

PNP General Purpose Amplifier

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

文件：58.25 Kbytes 页数：6 Pages

Fairchild

仙童半导体

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics.

文件：42.16 Kbytes 页数：2 Pages

Fairchild

仙童半导体

PNP General-Purpose Transistor

Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63.

文件：315.66 Kbytes 页数：8 Pages

ONSEMI

安森美半导体