30 V, 6 A N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology Applicatio

文件：190.52 Kbytes 页数：15 Pages

恩XP

N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 Rg and UIS Tested

文件：1.00855 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：MT29EN；Package：SOT223；30 V, 6 A N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology 1

文件：462.99 Kbytes 页数：16 Pages

NEXPERIA

安世

30 V, 6 A N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Nexperia

安世