丝印：PMT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：PMTM；Package：SOT-23；SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Low-Cost Singl

文件：753.24 Kbytes 页数：27 Pages

TI

德州仪器

丝印：PMTM；Package：SOT-23；SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Low-Cost Singl

文件：753.24 Kbytes 页数：27 Pages

TI

德州仪器

丝印：PMTM；Package：SOT-23；SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Low-Cost Singl

文件：753.24 Kbytes 页数：27 Pages

TI

德州仪器

丝印：PMTM；Package：SOT-23；SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Low-Cost Singl

文件：753.24 Kbytes 页数：27 Pages

TI

德州仪器

丝印：PMTM；Package：SOT-23；SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · Low-Cost Singl

文件：753.24 Kbytes 页数：27 Pages

TI

德州仪器

丝印：PMT9100DM-T2QU；Media Tracking Chip

文件：1.63616 Mbytes 页数：15 Pages

Pixart

原相科技

丝印：T200EN；Package：SOT223；100 V N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology

文件：336.17 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：T2EPE；Package：SOT223；70 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic level compatible • Very fast switching • Trench MOSFET technology •

文件：290.7 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：MT21EN；Package：SOT223；30 V, 7.4 A N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology 1

文件：461.2 Kbytes 页数：16 Pages

NEXPERIA

安世