PMPB12R7EP

丝印：ZM；Package：SOT1220-2；30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020M-6(SOT1220-2)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •Veryfastswitching •TrenchMOS

PMPB12R7EP

30 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.\n; • Logic-level compatible\n• Very fast switching\n• Trench MOSFET technology\n• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm\n• Exposed drain pad for excellent thermal conduction\n;

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