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PMPB07R3VP中文资料12 V, P-channel Trench MOSFET数据手册Nexperia规格书
PMPB07R3VP规格书详情
描述 Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
特性 Features
• Low threshold voltage
• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
应用 Application
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Computing power management
技术参数
- 制造商编号
:PMPB07R3VP
- 生产厂家
:Nexperia
- Package name
:DFN2020M-6
- Product status
:Production
- Channel type
:P
- Nr of transistors
:1
- VDS [max] (V)
:-12
- VGS [max] (V)
:8
- RDSon [max] @ VGS = 4.5 V (mΩ)
:8.6
- RDSon [max] @ VGS = 2.5 V (mΩ)
:12
- integrated gate-source ESD protection diodes
:N
- Tj [max] (°C)
:150
- ID [max] (A)
:-17.5
- QGD [typ] (nC)
:7.4
- QG(tot) [typ] @ VGS = 4.5 V (nC)
:28
- Ptot [max] (W)
:3.8
- VGSth [typ] (V)
:-0.65
- Automotive qualified
:N
- Ciss [typ] (pF)
:2121
- Coss [typ] (pF)
:511.00003
- Release date
:2021-03-01
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
DFN6(2x2) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
恩XP |
23+ |
9865 |
原装正品,假一赔十 |
询价 | |||
恩XP |
24+ |
N/A |
18000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
Nexperia |
ROHS/NEW. |
原封ORIGIANL |
30050 |
原装,元器件供应/半导体 |
询价 | ||
NEXPERIA/安世 |
24+ |
DFN2020MD-6(SOT1220 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
Nexperia(安世) |
2447 |
SOT1220 |
115000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
Nexperia USA Inc. |
2022+ |
6-UDFN 裸露焊盘 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
NEXPERIA/安世 |
23+ |
SOT1220 |
6000 |
原装正品假一罚百!可开增票! |
询价 | ||
恩XP |
2023+ |
N/A |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
NK/南科功率 |
2025+ |
DFN2020M-6 |
986966 |
国产 |
询价 |