丝印：ZA；Package：SOT1220-2；20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSF

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NEXPERIA

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20 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Low threshold voltage\n• Very fast switching\n• Trench MOSFET technology\n• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm\n• Exposed drain pad for excellent thermal conduction;

Nexperia

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9dB Attenuator SMA 50 Ohm DC to 3GHz

文件：319.93 Kbytes 页数：2 Pages

CRYSTEKMICROWAVE

2dB Attenuator SMA 50 Ohm DC to 3GHz

文件：319.68 Kbytes 页数：2 Pages

CRYSTEKMICROWAVE

7dB Attenuator SMA 50 Ohm DC to 3GHz

文件：319.83 Kbytes 页数：2 Pages

CRYSTEKMICROWAVE