Power Metal Film Resistors

文件：291.37 Kbytes 页数：1 Pages

Riedon

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features For surface mounted applications Low profile package clamping capability cycle):0.01 High temperature soldering guaranteed: 260 ℃/10 seconds, at terminals 200W peak pulse power capability wi t h a 10/1000 μ Low incremental surge resistance, excellent s wave from,repetition rate

文件：996.76 Kbytes 页数：3 Pages

SUNMATE

森美特

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features For surface mounted applications Low profile package clamping capability cycle):0.01 High temperature soldering guaranteed: 260 ℃/10 seconds, at terminals 200W peak pulse power capability wi t h a 10/1000 μ Low incremental surge resistance, excellent s wave from,repetition rate

文件：996.76 Kbytes 页数：3 Pages

SUNMATE

森美特

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features For surface mounted applications Low profile package clamping capability cycle):0.01 High temperature soldering guaranteed: 260 ℃/10 seconds, at terminals 200W peak pulse power capability wi t h a 10/1000 μ Low incremental surge resistance, excellent s wave from,repetition rate

文件：996.76 Kbytes 页数：3 Pages

SUNMATE

森美特

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features For surface mounted applications Low profile package clamping capability cycle):0.01 High temperature soldering guaranteed: 260 ℃/10 seconds, at terminals 200W peak pulse power capability wi t h a 10/1000 μ Low incremental surge resistance, excellent s wave from,repetition rate

文件：996.76 Kbytes 页数：3 Pages

SUNMATE

森美特

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features For surface mounted applications Low profile package clamping capability cycle):0.01 High temperature soldering guaranteed: 260 ℃/10 seconds, at terminals 200W peak pulse power capability wi t h a 10/1000 μ Low incremental surge resistance, excellent s wave from,repetition rate

文件：996.76 Kbytes 页数：3 Pages

SUNMATE

森美特

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features For surface mounted applications Low profile package clamping capability cycle):0.01 High temperature soldering guaranteed: 260 ℃/10 seconds, at terminals 200W peak pulse power capability wi t h a 10/1000 μ Low incremental surge resistance, excellent s wave from,repetition rate

文件：996.76 Kbytes 页数：3 Pages

SUNMATE

森美特

丝印：F6；Package：SOT323；N-channel TrenchMOS extremely low level FET

1. General description Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits

文件：267.51 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：FK；Package：SOT323；N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits E

文件：453.23 Kbytes 页数：13 Pages

NEXPERIA

安世

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

文件：752.937 Kbytes 页数：3 Pages

SUNMATE

森美特

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