丝印：F6；Package：SOT323；N-channel TrenchMOS extremely low level FET

1. General description Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits

文件：267.51 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel mTrenchMOS extremely low level FET

文件：90.62 Kbytes 页数：12 Pages

PHI

PHI

N-channel TrenchMOS extremely low level FET

文件：177.37 Kbytes 页数：12 Pages

恩XP

N-channel TrenchMOS extremely low level FET

Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世