N-channel mTrenchMOS™ ultra low level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n Surface mounted package n Footprint 40 smaller than SOT23 n Low on-state resistance n Low threshold voltage. n Driver circuits n Switching in

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N-channel mTrenchMOS ultra low level FET

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N-Channel 20 V (D-S) MOSFET

文件：1.93426 Mbytes 页数：9 Pages

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N-channel TrenchMOS ultra low level FET

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世