PMEG40T10ER

40 V, 1 A low VF Trench MEGA Schottky barrier rectifier; • Average forward current: IF(AV) ≤ 1 A\n• Reverse voltage: VR ≤ 40 V\n• Low forward voltage\n• Low leakage current due to Trench MEGA Schottky technology\n• High power capability due to clip-bonding technology\n• Small and flat lead SMD plastic package\n• Capable for reflow and wave soldering\n• AEC-Q101 qualified\n;

Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package.\n

PMEG40T10ER

丝印：L2；Package：CFP3；40 V, 1 A low VF Trench MEGA Schottky barrier rectifier

PMEG40T10ER-Q

丝印：L2；Package：CFP3；40 V, 1 A low VF Trench MEGA Schottky barrier rectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP3(SOD123W)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤1A •Reversevoltage:VR≤

PMEG40T10ER-QX

Package：SOD-123W；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A SOD123W

ETC

PMEG40T10ERX

Package：SOD-123W；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A SOD123W

ETC

AP40T10GH

N-CHANNELENHANCEMENTMODEPOWERMOSFET

AP40T10GH

N-Channel100-V(D-S)MOSFET

AP40T10GH-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

AP40T10GI

N-CHANNELENHANCEMENTMODEPOWERMOSFET

AP40T10GI-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET