丝印：F1；Package：SOT666；Low VF MEGA Schottky barrier diode

FEATURES •Forward current: 1 A •Reverse voltage: 20 V •Very low forward voltage •Ultra small SMD package •Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS •Low voltage rectification •High efficiency DC/DC conversion •Switch mode power supply •Inverse polar

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安世安世半导体(中国)有限公司

Low VF MEGA Schottky barrier diode

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飞利浦

Low VF MEGA Schottky barrier diode

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Low VF MEGA Schottky barrier diode

文件：106.84 Kbytes 页数：7 Pages

PHI

飞利浦

Low VF MEGA Schottky barrier diode

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. • Forward current: 1 A\n• Reverse voltage: 20 V\n• Very low forward voltage\n• Ultra small SMD package\n• Flat leads: excellent coplanarity and improved thermal behaviour.\n• AEC-Q101 qualified;

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Package：SOT-563，SOT-666；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 20V 1A SOT666

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司