丝印：G1；Package：SOD123；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: IF ≤ 0.5 A • Rev

文件：220.21 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, 0.5 A low VF MEGA Schottky barrier rectifier

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SOD123 Surface-Mounted Device (SMD) plastic package. • Forward current: IF ≤ 0.5 A\n• Reverse voltage: VR ≤ 20 V\n• Low forward voltage typ. VF = 355 mV\n• Low reverse current typ. IR = 40 µA\n• Small SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

0.5 A very low VF MEGA Schottky barrier rectifiers

General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in small SMD package. Features ■ Forward current: 0.5 A ■ Very low forward voltage ■ Flat lead SMD package Applications ■ Low

文件：77.09 Kbytes 页数：13 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦