100 V, 2 A low leakage current Schottky barrier rectifier

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. • Average forward current: IF(AV) ≤ 2 A\n• Reverse voltage: VR ≤ 100 V\n• Low forward voltage: VF = 710 mV\n• High power capability due to clip-bonding technology\n• Extremely low leakage current\n• High temperature Tj ≤ 175 °C\n• Small and flat lead SMD plastic package\n• Qualified according to AEC;

Nexperia

安世

丝印：K9；Package：CFP3；100 V, 2 A low leakage current Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤

文件：265.78 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：SOD-123W；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 100V 2A SOD123W

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 2 A low leakage current Schottky barrier rectifier

文件：238.13 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 2 A low leakage current Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤

文件：266.4 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN Darlington Transistors

NPN Darlington Transistors TO-204MA (TO-3)

文件：344.75 Kbytes 页数：3 Pages

Microsemi

美高森美