100 V, 2 A low leakage current Schottky barrier rectifier

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. • Average forward current: IF(AV) ≤ 2 A\n• Reverse voltage: VR ≤ 100 V\n• Low forward voltage: VF = 770 mV\n• High power capability due to clip-bonding technology\n• Extremely low leakage current IR = 40 nA\n• High temperature Tj ≤ 175 °C\n• Qualified according to AEC-Q101 and recommended for use in;

Nexperia

安世

丝印：K8；Package：CFP3；100 V, 2 A low leakage current Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤

文件：266.4 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：SOD-123W；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 100V 2A SOD123W

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN Darlington Transistors

NPN Darlington Transistors TO-204MA (TO-3)

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125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance at 960 MHz, 28 Vol

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爱立信

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