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首页>PMDXB600UNE>芯片详情
PMDXB600UNE_NEXPERIA/安世_20 V, dual N-channel Trench MOSFET华康联电子
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产品属性
- 类型
描述
- 制造商编号
:PMDXB600UNE
- 生产厂家
:安世
- Package name
:DFN1010B-6
- Product status
:Production
- Channel type
:N
- Nr of transistors
:2
- VDS [max] (V)
:20
- VGS [max] (V)
:8
- RDSon [max] @ VGS = 4.5 V (mΩ)
:620
- RDSon [max] @ VGS = 2.5 V (mΩ)
:850
- integrated gate-source ESD protection diodes
:Y
- VESD HBM (V)
:1000
- Tj [max] (°C)
:150
- ID [max] (A)
:0.6
- QGD [typ] (nC)
:0.1
- QG(tot) [typ] @ VGS = 4.5 V (nC)
:0.4
- Ptot [max] (W)
:0.265
- VGSth [typ] (V)
:0.7
- Automotive qualified
:N
- Ciss [typ] (pF)
:21.3
- Coss [typ] (pF)
:5.4
- Release date
:2016-06-28
供应商
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