丝印：2U；Package：DFN2020-6；30 V dual N-channel Trench MOSFET

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丝印：3B；Package：DFN2020-6；30 V, dual N-channel Trench MOSFET

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30 V dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

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30 V, dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very fast switching\n• Trench MOSFET technology\n• Leadless medium power SMD plasticpackage:2×2×0.65mm\n• Exposed drain pad for excellent thermal conduction\n• EletroStatic Discharge (ESD) protection > 2kVHBM;

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MOSFET 2N-CH 30V 2.4A HUSON6

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