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首页>PMDPB58UPE>芯片详情
PMDPB58UPE_NKK/恩楷楷_20 V dual P-channel Trench MOSFET南科功率半导
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产品属性
- 类型
描述
- 制造商编号
:PMDPB58UPE
- 生产厂家
:安世
- Package name
:DFN2020-6
- Product status
:Production
- Channel type
:P
- Nr of transistors
:2
- VDS [max] (V)
:-20
- VGS [max] (V)
:8
- RDSon [max] @ VGS = 4.5 V (mΩ)
:67
- RDSon [max] @ VGS = 2.5 V (mΩ)
:95
- integrated gate-source ESD protection diodes
:Y
- VESD HBM (V)
:2000
- Tj [max] (°C)
:150
- ID [max] (A)
:-4.5
- QGD [typ] (nC)
:0.90000004
- QG(tot) [typ] @ VGS = 4.5 V (nC)
:6.3
- Ptot [max] (W)
:0.515
- VGSth [typ] (V)
:-0.7
- Automotive qualified
:N
- Ciss [typ] (pF)
:804
- Coss [typ] (pF)
:95
- Release date
:2012-06-20
供应商
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