Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • Designed for use in power switching application.

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ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 1000(Min)@ IC=10A APPLICATIONS ·Designed for general purpose amplifier and low frequencyswitching applications

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ISC

无锡固电

SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD16K, PMD17K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, mounted in a hermetically sealed metal package, and designed for power switching applications. MARKING: FULL PART NUMBER

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Central

Power Transistors

Power Transistors TO-3 Case (Continued)

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Central

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

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Central

Silicon NPN Darlingtion Power Transistor

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans Darlington NPN 80V 20A 3-Pin(2+Tab) TO-3

NJS