PMD10K60技术资料参数原装现货新泽西半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PMD10K60	文件：151.09 Kbytes Page：1 Pages	SILICON POWER DARLING TRANSISTORSl SILICON POWER DARLINGTON TRANSISTORS 文件：151.09 Kbytes 页数：1 Pages	Central	Central
PMD10K60	文件：54.14 Kbytes Page：1 Pages	Power Transistors Power Transistors TO-3 Case (Continued) 文件：54.14 Kbytes 页数：1 Pages	Central	Central
PMD10K60	文件：215.24 Kbytes Page：2 Pages	isc Silicon NPN Darlingtion Power Transistor DESCRIPTION • High DC current gain • Collector-Emitter Sustaining Voltage - VCEO(SUS)= 60V(Min) • Complement to type PMD11K60 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications 文件：215.24 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
PMD10K60	文件：73.88 Kbytes Page：2 Pages	Silicon NPN Darlingtion Power Transistor DESCRIPTION • High DC current gain • Collector-Emitter Sustaining Voltage - VCEO(SUS)= 60V(Min) • Complement to type PMD11K60 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications 文件：73.88 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
PMD10K60	文件：151.09 Kbytes Page：1 Pages	Silicon Power Darlington Transistors 文件：151.09 Kbytes 页数：1 Pages	Central	Central
PMD10K60	文件：300 bytes Page：1 Pages	Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington	Central	Central

更多PMD10K60供应商更新时间2025-10-4 16:01:00