丝印：A1；Package：WLCSP9_3x3；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra small package: 1.48 × 1.48 × 0.35 mm • Trench MOSFET technology • Elect

文件：475.56 Kbytes 页数：14 Pages

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Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

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60 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. • Low threshold voltage\n• Ultra small package: 1.48 × 1.48 × 0.35 mm\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection > 2 kV HBM;

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20 V, dual P-channel Trench MOSFET

1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small and ultr

文件：732.4 Kbytes 页数：15 Pages

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20 V, dual P-channel Trench MOSFET

文件：739.16 Kbytes 页数：16 Pages

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