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1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Ultra small package: 1.48 × 1.48 × 0.35 mm • Trench MOSFET technology • Elect

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60 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. • Low threshold voltage\n• Ultra small package: 1.48 × 1.48 × 0.35 mm\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection > 2 kV HBM;

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