40 V, 600 mA PNP switching transistor

Features and benefits • High current (max. 600 mA) • Collector-emitter voltage VCEO = 40 V • Qualified according to AEC-Q101 and recommended for use in automotive applications Applications • Switching and linear amplification

文件：229.29 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 600 mA PNP switching transistor

PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. • High current (max. 600 mA)\n• Collector-emitter voltage VCEO = 40 V\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

40V, 600 mA double PNP switching transistor

General description Double PNP switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. Double NPN complement: PMBT4401YS Features and benefits • Double general-purpose switching transistor • AEC-Q101 qualified Applications • Switching and linear am

文件：704.66 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP switching transistor

DESCRIPTION PNP switching transistor in a SOT323 plastic package. NPN complement: PMST4401. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification.

文件：47.03 Kbytes 页数：8 Pages

PHI

飞利浦