N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-s

文件：56.11 Kbytes 页数：8 Pages

PHI

飞利浦

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PMBF170 in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applica

文件：379.48 Kbytes 页数：14 Pages

NEXPERIA

安世

N-channel TrenchMOS intermediate level FET

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

文件：752.937 Kbytes 页数：3 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 190 Volts

文件：397.49 Kbytes 页数：3 Pages

SPSEMI

瞬雷电子

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features For surface mounted applications Low profile package clamping capability cycle):0.01 High temperature soldering guaranteed: 260 ℃/10 seconds, at terminals 200W peak pulse power capability wi t h a 10/1000 μ Low incremental surge resistance, excellent s wave from,repetition rate

文件：996.76 Kbytes 页数：3 Pages

SUNMATE

森美特