S8202

11watt;MiniSpiralCompactFluorescent;2700K;82CRI;GU24base;120volts

S8202

SILICONGATEENHANCEMENTMODERFPOWERVDMOSTRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeatureslowfeedbackandoutputcapacitances,re

SAI8202

AcompletetrainingsysteminthefieldofIndustrialProcessControl

SI-8202L

SwitchingType(SelfOscillationTypewithCoil)

SPHE8202S

CHIPSET

STS8202

SuperhighdensecelldesignforlowRDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

TD8202

1MHz,High-Efficiency,Step-UpConverterfor2to8WhiteLEDs

TPC8202

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(PIE-MOSVI)

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs •2.5-VGatedrive •Smallfootprintduetosmallandthinpackage •Lowdrain−sourceONresistance:RDS(ON)=41mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=9S(typ.) •Lowleakagecurrent:IDSS=

TPCP8202

TOSHIBAFieldEffectTransistorSiliconN-ChannelMOSType(U-MOSIV)

PortableEquipmentApplications MotorDriveApplications DC-DCConverters •Lead(Pb)-Free •Lowdrain-sourceON-resistance:RDS(ON)=19mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=20S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) •Enhancementmodel:Vth=0.7to

TPCP8202

PortableEquipmentApplicationsMotorDriveApplicationsDC_DCConverters